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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION *With TO-220 package *Low collector saturation voltage *High VCBO *High speed switching APPLICATIONS *For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2SC2831 VCBO Collector-base voltage 2SC2831A VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter 900 500 8 1.5 3 0.5 25 150 -55~150 V V A A A W CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC2831 2SC2831A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; L=25mH IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V;IE=0 2SC2831 2SC2831A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 100 VCB=900V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 2.5 100 A A MHz Switching times 2SC2831 ton Turn-on time 2SC2831A tstg Storage time 2SC2831 tf Fall time 2SC2831A 1.2 IC=1A ; IB1=-IB2=-0.2A VCC=200V 1.2 3.0 1.0 s s 1.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2831 2SC2831A Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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